Hattori et al., 2007 - Google Patents

Classifications

• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/10—Light guides of the optical waveguide type
  • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
  • G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
  • H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/10—Light guides of the optical waveguide type
  • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
  • G02B2006/12166—Manufacturing methods
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/10—Light guides of the optical waveguide type
  • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
  • G02B2006/12083—Constructional arrangements
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting lasers (SE-lasers)
  • H01S5/183—Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting lasers (SE-lasers)
  • H01S5/187—Surface-emitting lasers (SE-lasers) using a distributed Bragg reflector (SE-DBR-lasers)
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
  • H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
  • H01S3/06—Construction or shape of active medium
  • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
  • H01S3/067—Fibre lasers
  • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/24—Coupling light guides
  • G02B6/26—Optical coupling means
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
  • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
  • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
  • H01S5/06255—Controlling the frequency of the radiation
  • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/20—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
  • H01S5/2004—Confining in the direction perpendicular to the layer structure

Similar Documents