Ahmed, 1989 - Google Patents
Program to Study the Process Parameters of OMVPE and Their Relationship to the Properties of Ga (0.47) In (0.53) As ON InP SubstratesAhmed, 1989
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- 17272016326496499094
- Author
- Ahmed I
- Publication year
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The purpose of the work was a study of the process parameters of the organometallic vapor phase epitaxy technique and their relationship to the properties of gallium indium arsenide lattice matched to indium phosphide. The study was an extension of an earlier study at …
- 238000000034 method 0 title abstract description 61
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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