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Tu et al., 2003 - Google Patents

DC and RF characteristics of E-mode Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs

Tu et al., 2003

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Document ID
17203047886751756200
Author
Tu H
Chou T
Lin Y
Chiu H
Chen P
Wu W
Lu S
Publication year
Publication venue
IEEE Electron Device Letters

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Snippet

The DC and RF characteristics of Ga/sub 0.49/In/sub 0.51/P-In/sub 0.15/Ga/sub 0.85/As enhancement-mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 μm and a gate width of 200 μm. It is found that the device …
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