[go: up one dir, main page]

Krishnia, 2018 - Google Patents

Current-driven domain wall dynamics in coupled ferromagnetic structures

Krishnia, 2018

View PDF
Document ID
16913319438866906471
Author
Krishnia S
Publication year

External Links

Snippet

The manipulation of the magnetic moments in ferromagnetic (FM) layers via various spin torques has enabled the spintronics research community to encode the digital data in low- power, non-volatile memory and logic devices eg spin-transfer torque magnetic random …
Continue reading at dr.ntu.edu.sg (PDF) (other versions)

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements using thin films in plane structure
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/08Magnetic-field-controlled resistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/02Details

Similar Documents

Publication Publication Date Title
US9343658B2 (en) Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques
US8138758B2 (en) Method of controlling a magnetoresistive device using an electric field pulse
US9236103B2 (en) Bipolar spin-transfer switching
US9093163B2 (en) Magnetoresistive device
US20060146598A1 (en) Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell
KR20130107330A (en) Bipolar spin-transfer switching
US7630231B2 (en) Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell
Gong et al. A new pathway towards all-electric spintronics: electric-field control of spin states through surface/interface effects
Han et al. Perspectives of electric field controlled switching in perpendicular magnetic random access
Krishnia Current-driven domain wall dynamics in coupled ferromagnetic structures
Hrabec Domain wall dynamics in magnetic nanostructures: Effect of magnetic field and electric current
Zhang Skyrmion generation and perpendicular magnetic anisotropy modification in Heusler alloy ultrathin films
Krishnia et al. Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications
Sethu Spin orbit torques in magnetic materials
Shi Antiferromagnetic spin-orbit torque devices for random-access memory applications
Zhao Study of Interface Effects on Magnetization Reversal in Magnetic Structures with Perpendicular Magnetic Anisotropy
Wong Enhanced spin-orbit torque (SOT) and spin accumulation quantification in perpendicularly magnetised systems
Fan Sputtering Deposition and Characterization of Topological Insulator BiSb–Ferromagnet Multilayers
Liu Lateral interfacial coupling in ferromagnetic and ferrimagnetic systems
Xu et al. Thin‐Film Magnetic Skyrmions for Spintronic Devices
Alrisi Magnetic Nanowires for High Information Storage
Chatzimpaloglou Optical observation of magnetization dynamics induced by spin-orbit torque in micro-magnetic ellipsoid
Bultynck Time-Domain Spin-Transfer Torque Induced Magnetic Tunnel Junction Reversal Dynamics-Pathways for Fast Spin-Logic Applications
Zheng Study of soft magnetic thin films and patterned devices with MOKE imaging technique
Fettizio Magnetic Magnetic switching of Ta/CoFeB/MgO heterostructures via Spin-Orbit Torque for memory applications