[go: up one dir, main page]

Chu, 1979 - Google Patents

Thin films of silicon on metallurgical silicon substrates. Final report, 1 September 1976-30 September, 1979

Chu, 1979

View PDF
Document ID
16878799470609119851
Author
Chu T
Publication year

External Links

Snippet

The principal approach used in this work is the deposition of a silicon film of controlled thickness and dopant distribution on a purified metallurgical silicon substrate. Efforts have been directed to (1) the purification of metallurgical silicon,(2) the preparation of …
Continue reading at www.osti.gov (PDF) (other versions)

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/547—Monocrystalline silicon PV cells
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements

Similar Documents

Publication Publication Date Title
De Melo et al. Low resistivity cubic phase CdS films by chemical bath deposition technique
Chu Silicon films on foreign substrates for solar cells
Chu et al. Polycrystalline silicon solar cells on metallurgical silicon substrates
Cai et al. Effect of post-PECVD photo-assisted anneal on multicrystalline silicon solar cells
Chu et al. Large grain silicon films on metallurgical silicon substrates for photovoltaic applications
Elgamel High efficiency polycrystalline silicon solar cells using low temperature PECVD process
Wagner et al. Chemistry and preparation of InP/CdS solar cells
Spiegel Microwave induced remote hydrogen plasma (MIRHP) passivation of multicrystalline silicon solar cells
Chu Thin films of silicon on metallurgical silicon substrates. Final report, 1 September 1976-30 September, 1979
Kieliba Zone-melting recrystallization for crystalline silicon thin-film solar cells
Weisz et al. The compositional dependence of the optical and electrical properties of hydrogenated amorphous Si-Ge films prepared by co-sputtering
Chu et al. Polycrystalline silicon pn junctions
Härkönen Processing of high efficiency silicon solar cells
Mercier Physical and Electrical Investigations on Silicon Epitaxial Layers on Sapphire Substrates
Krygowski et al. A simultaneously diffused, textured, in situ oxide AR-coated solar cell process (STAR process) for high-efficiency silicon solar cells
Chu et al. Gallium arsenide films on tungsten/graphite substrates
Astles et al. Doping of LPE layers of CdTe grown from te solutions
Schock et al. 2.16 Technology of large area Cu2S CdS solar cells
Chu Thin films of silicon on metallurgical silicon substrates. Phase II. Quarterly project report, March 1-May 31, 1978
JP2846704B2 (en) Photoelectric conversion element
Wang et al. Material properties of polysilicon layers deposited by atmospheric pressure iodine vapor transport
JPH0582815A (en) Solar cell
Trinh et al. Influence of doping concentration and contact geometry on the performance of interdigitated back-contact silicon heterojunction of liquid phase crystalline silicon on glass
Norouzi Plasma-Based Multifunctional Surface Modification and Laser Doping Technologies for Bifacial PERL/PERC c-Si Solar Cells with Selective Emitter
Storti et al. Investigation of the impurity tolerance of semicrystalline silicon solar cells silicon impact program. Quarterly technical progress report No. 2, January 1, 1980-March 31, 1980