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Huh et al., 2002 - Google Patents

Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer

Huh et al., 2002

Document ID
16727151434087458750
Author
Huh C
Lee J
Kim D
Park S
Publication year
Publication venue
Journal of Applied Physics

External Links

Snippet

The fabrication and characterization of an InGaN/GaN multiple-quantum well (MQW) light- emitting diode (LED) with a SiO 2 current blocking layer inserted beneath the p-pad electrode is described. The light-output power and external quantum efficiency for the …
Continue reading at pubs.aip.org (other versions)

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    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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