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Lo et al., 2002 - Google Patents

The use of ultrathin reoxidized nitrided gate oxide for suppression of boron penetration in BF/sub 2//sup+/-implanted polysilicon gated p-MOSFETs

Lo et al., 2002

Document ID
16669296761872414349
Author
Lo G
Kwong D
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

The authors report the use of rapid thermal reoxidized nitrided thin (approximately 90-AA) gate oxides in BF/sub 2//sup+/-implanted polysilicon gated p-MOSFETs. Although lightly nitrided gate oxides are unable to block the boron penetration, reoxidized nitrided gate …
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