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Voronenkov et al., 2013 - Google Patents

Nature of V-shaped defects in GaN

Voronenkov et al., 2013

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Document ID
16400336322585004743
Author
Voronenkov V
Bochkareva N
Gorbunov R
Latyshev P
Lelikov Y
Rebane Y
Tsyuk A
Zubrilov A
Shreter Y
Publication year
Publication venue
Japanese Journal of Applied Physics

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Snippet

GaN films with thicknesses up to 3 mm were grown in two custom-made halide vapor phase epitaxy (HVPE) reactors. V-shaped defects (pits) with densities from 1 to 100 cm-2 were found on the surfaces of the films. Origins of pit formation and the process of pit overgrowth …
Continue reading at arxiv.org (PDF) (other versions)

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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

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