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Spitz et al., 2002 - Google Patents

2.6 kv 4h-sic lateral dmosfets

Spitz et al., 2002

Document ID
16336968494927713070
Author
Spitz J
Melloch M
Cooper J
Capano M
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

A 4H-SiC lateral double-implanted metal-oxide-semiconductor (LDMOS) field effect transistor is fabricated in a lightly doped n-epilayer on an insulating 4H-SiC substrate. After depleting through the epilayer, the depletion region continues to move laterally toward the …
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