[go: up one dir, main page]

Masuda et al., 2003 - Google Patents

A high spectral purity GaAs pHEMT MMIC balanced frequency quadrupler

Masuda et al., 2003

View PDF
Document ID
1615255428854851166
Author
Masuda T
Lowenmark V
Zirath H
Kozhuharov R
Publication year
Publication venue
GAAS IC SYMPOSIUM

External Links

Snippet

A High Spectral Purity GaAs PHEMT MMIC Balanced Frequency Quadrupler Page 1 A High Spectral Purity GaAs PHEMT MMIC Balanced Frequency Quadrupler Toru Masuda + Vesa Löwenmark* Herbert Zirath* Rumen Kozhuharov* tmasuda@crl.hitachi.co.jp vesa@ep.chalmers.se …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1433—Balanced arrangements with transistors using bipolar transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1408—Balanced arrangements with diodes
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041—Functional aspects of demodulators
    • H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00—Details
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers

Similar Documents

Publication Publication Date Title
Ali et al. 220–360-GHz broadband frequency multiplier chains (x8) in 130-nm BiCMOS technology
Yuan et al. 90–140 GHz frequency octupler in Si/SiGe BiCMOS using a novel bootstrapped doubler topology
Lee et al. 65.6–75.2-GHz phase-controlled push–push frequency quadrupler with 8.3% DC-to-RF efficiency in 40-nm CMOS
Bredendiek et al. An ultra-wideband D-band signal source chip using a fundamental VCO with frequency doubler in a SiGe bipolar technology
US10637450B2 (en) Broadband frequency tripler
Chen et al. A K-band frequency tripler using transformer-based self-mixing topology with peaking inductor
Li et al. A 205–273-GHz frequency multiplier chain (× 6) with 9-dBm output power and 1.92% DC-to-RF efficiency in 0.13-µm SiGe BiCMOS
Steinweg et al. A low-power 255-GHz single-stage frequency quadrupler in 130-nm SiGe BiCMOS
Karakuzulu et al. A broadband 110–170 GHz frequency multiplier by 4 chain with 8 dBm output power in 130 nm BiCMOS
Mazor et al. X-band to W-band frequency multiplier in 65 nm CMOS process
Gadallah et al. A 250-300 GHz Frequency Multiplier-by-8 Chain in SiGe Technology
US20080054955A1 (en) Radio frequency doubler
Ali et al. A broadband 110–170 GHz frequency quadrupler with 29 dBc harmonic rejection in a 130-nm SiGe BiCMOS technology
Masuda et al. A high spectral purity GaAs pHEMT MMIC balanced frequency quadrupler
Steinweg et al. A 213 GHz 2 dBm output-power frequency quadrupler with 45 dB harmonic suppression in 130 nm SiGe BiCMOS
Kang et al. A miniaturized K-band balanced frequency doubler using InGaP HBT technology
JP2001274629A (en) Frequency multiplier and transmitter-receiver using it
Bao et al. A D-band keyable high efficiency frequency quadrupler
Piotto et al. A K-band Gilbert-cell frequency doubler with self-adjusted 25% LO duty-cycle in SiGe BiCMOS technology
Khan et al. 120 Ghz Down Conversion Mixer Design For Improved Linearity, High Conversion-Gain and Low Noise-Figure in 130 Nm CMOS Technology
WO2016041575A1 (en) A power efficient frequency multiplier
Ergintav et al. An integrated 122GHz differential frequency doubler with 37GHz bandwidth in 130 nm SiGe BiCMOS technology
Darban et al. Low-power mm-wave frequency quadrupler using deep class-c doublers
Haung et al. A GaAs-based HBT 31-GHz frequency doubler with an on-chip voltage
Lu et al. A Ka-band frequency doubler with a broadband matching scheme for efficiency optimization