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Meier et al., 1994 - Google Patents

Intrinsic microcrystalline silicon (/spl mu/c-Si: H)-a promising new thin film solar cell material

Meier et al., 1994

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Document ID
15995230391086394223
Author
Meier J
Dubail S
Fluckiger R
Fischer D
Keppner H
Shah A
Publication year
Publication venue
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion-WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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" Compensated" microcrystalline silicon is obtained by adding 8-20 ppm diborane in the plasma gas phase. pin cells with such i-layers have increased infrared sensitivity when compared to a-Si: H pin cells. The preparation of the world's first" mixed stacked" a-Si: H//spl …
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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