[go: up one dir, main page]

Han et al., 2018 - Google Patents

Low-cost oriented hierarchical growth of BiVO4/rGO/NiFe nanoarrays photoanode for photoelectrochemical water splitting

Han et al., 2018

Document ID
15963375627559163634
Author
Han X
Wei Y
Su J
Zhao Y
Publication year
Publication venue
ACS Sustainable Chemistry & Engineering

External Links

Snippet

A unique BiVO4/reduced graphene oxide (rGO)/NiFe hydroxide photoanode with oriented hierarchical nanostructure was fabricated via a facile and scalable solution route. Microstructure analysis shows that the ternary nanocomposite system presented a …
Continue reading at pubs.acs.org (other versions)

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/549—Material technologies organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/50—Fuel cells
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
    • H01M4/90—Selection of catalytic material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nano-rods
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of or comprising active material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL INTO ELECTRICAL ENERGY
    • H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof

Similar Documents

Publication Publication Date Title
Han et al. Low-cost oriented hierarchical growth of BiVO4/rGO/NiFe nanoarrays photoanode for photoelectrochemical water splitting
Xiao et al. Interfacial construction of zero-dimensional/one-dimensional g-C3N4 nanoparticles/TiO2 nanotube arrays with Z-scheme heterostructure for improved photoelectrochemical water splitting
Kim et al. Z-scheme photocatalytic CO2 conversion on three-dimensional BiVO4/carbon-coated Cu2O nanowire arrays under visible light
Lee et al. Tailored NiO x/Ni cocatalysts on silicon for highly efficient water splitting photoanodes via pulsed electrodeposition
Gao et al. Electrodeposited Co-substituted LaFeO3 for enhancing the photoelectrochemical activity of BiVO4
Pihosh et al. Development of a core–shell heterojunction Ta3N5-nanorods/BaTaO2N photoanode for solar water splitting
Hou et al. Visible light-driven α-Fe2O3 nanorod/graphene/BiV1–x Mo x O4 core/shell heterojunction array for efficient photoelectrochemical water splitting
Liu et al. Enhanced photoelectrochemical water splitting of photoelectrode simultaneous decorated with cocatalysts based on spatial charge separation and transfer
Zhao et al. Stabilizing silicon photocathodes by solution-deposited Ni–Fe layered double hydroxide for efficient hydrogen evolution in alkaline media
Liu et al. Photoelectrochemical water splitting of CuInS2 photocathode collaborative modified with separated catalysts based on efficient photogenerated electron–hole separation
Chhetri et al. Photoelectrochemical oxygen evolution reaction activity of amorphous Co–La double hydroxide-BiVO4 fabricated by pulse plating electrodeposition
Liu et al. Highly Efficient Photoelectrochemical Hydrogen Generation Using Zn x Bi2S3+ x Sensitized Platelike WO3 Photoelectrodes
Zhao et al. High-performance ultrathin BiVO4 photoanode on textured polydimethylsiloxane substrates for solar water splitting
Peng et al. Enhanced photoelectrochemical water oxidation by fabrication of p-LaFeO3/n-Fe2O3 heterojunction on hematite nanorods
Jung et al. Effect of the Si/TiO2/BiVO4 heterojunction on the onset potential of photocurrents for solar water oxidation
Wu et al. P-type Cu-doped Zn0. 3Cd0. 7S/graphene photocathode for efficient water splitting in a photoelectrochemical tandem cell
Hussain et al. Spray pyrolysis deposition of ZnFe2O4/Fe2O3 composite thin films on hierarchical 3-D nanospikes for efficient photoelectrochemical oxidation of water
Wang et al. Plasmon-enhanced layered double hydroxide composite BiVO4 photoanodes: layering-dependent modulation of the water-oxidation reaction
Xu et al. Band positions and photoelectrochemical properties of solution-processed silver-substituted Cu2ZnSnS4 photocathode
Zhou et al. Promising three-dimensional flowerlike CuWO4 photoanode modified with CdS and FeOOH for efficient photoelectrochemical water splitting
David et al. Facile hydrothermally synthesized a novel CdS nanoflower/rutile-TiO2 nanorod heterojunction photoanode used for photoelectrocatalytic hydrogen generation
Xu et al. Interface band engineering charge transfer for 3D MoS2 photoanode to boost photoelectrochemical water splitting
Liu et al. Particle‐based photoelectrodes for PEC water splitting: concepts and perspectives
Commandeur et al. Yttrium-doped ZnO nanorod arrays for increased charge mobility and carrier density for enhanced solar water splitting
Ibadurrohman et al. Morphological modification of TiO2 thin films as highly efficient photoanodes for photoelectrochemical water splitting