Zhou et al., 2016 - Google Patents
Wafer-scale integration of inverted nanopyramid arrays for advanced light trapping in crystalline silicon thin film solar cellsZhou et al., 2016
View HTML- Document ID
- 15901065927989743121
- Author
- Zhou S
- Yang Z
- Gao P
- Li X
- Yang X
- Wang D
- He J
- Ying Z
- Ye J
- Publication year
- Publication venue
- Nanoscale research letters
External Links
Snippet
Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency …
- 229910021419 crystalline silicon 0 title abstract description 61
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/549—Material technologies organic PV cells
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nano-rods
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Zhou et al. | Wafer-scale integration of inverted nanopyramid arrays for advanced light trapping in crystalline silicon thin film solar cells | |
Chen et al. | A 19.9%-efficient ultrathin solar cell based on a 205-nm-thick GaAs absorber and a silver nanostructured back mirror | |
Narasimhan et al. | Nanostructures for photon management in solar cells | |
Moayedfar et al. | Various types of anti-reflective coatings (ARCS) based on the layer composition and surface topography: a review | |
Adachi et al. | Broadband solar absorption enhancement via periodic nanostructuring of electrodes | |
Mendes et al. | Broadband light trapping in thin film solar cells with self-organized plasmonic nano-colloids | |
Mendes et al. | Optimal-enhanced solar cell ultra-thinning with broadband nanophotonic light capture | |
Schmid et al. | Modeling plasmonic scattering combined with thin-film optics | |
Tseng et al. | Antireflection and light trapping of subwavelength surface structures formed by colloidal lithography on thin film solar cells | |
Wang et al. | High index of refraction nanosphere coatings for light trapping in crystalline silicon thin film solar cells | |
CN102074591A (en) | Composite micro-nano photon structure for enhancing absorption efficiency of solar cell and manufacturing method thereof | |
Wang et al. | Large-scale bio-inspired flexible antireflective film with scale-insensitivity arrays | |
Lin et al. | A broadband and omnidirectional light-harvesting scheme employing nanospheres on Si solar cells | |
Leem et al. | Broadband antireflective germanium surfaces based on subwavelength structures for photovoltaic cell applications | |
Lin et al. | Surface plasmon effects in the absorption enhancements of amorphous silicon solar cells with periodical metal nanowall and nanopillar structures | |
Leem et al. | Single-material zinc sulfide bi-layer antireflection coatings for GaAs solar cells | |
Piechulla et al. | Antireflective Huygens’ metasurface with correlated disorder made from high-index disks implemented into silicon heterojunction solar cells | |
O’Brien et al. | Selectively transparent and conducting photonic crystal rear-contacts for thin-film silicon-based building integrated photovoltaics | |
Kim et al. | High-index-contrast photonic structures: a versatile platform for photon manipulation | |
Zhang et al. | Biomimetic and plasmonic hybrid light trapping for highly efficient ultrathin crystalline silicon solar cells | |
Tan et al. | Enhancement of light trapping for ultrathin crystalline silicon solar cells | |
Fu et al. | Efficiency enhancement of InGaN multi-quantum-well solar cells via light-harvesting SiO2 nano-honeycombs | |
Lee et al. | Colored dual-functional photovoltaic cells | |
Thangavel et al. | Disordered polymer antireflective coating for improved perovskite photovoltaics | |
Yang et al. | Light trapping enhancement in a thin film with 2D conformal periodic hexagonal arrays |