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Fisanick et al., 1988 - Google Patents

CW laser etching of Ba2YCu3O7 films

Fisanick et al., 1988

Document ID
15835835813883708319
Author
Fisanick G
Brasen D
Opila R
Moore R
Mankiewich P
Skocpol W
Howard R
Hong M
O’Bryan H
Publication year
Publication venue
AIP Conference Proceedings

External Links

Snippet

Laser induced etching has been used to pattern 2000–7000 Å thick films of the superconducting perovskite Ba2YCu3O7 and its amorphous precursor. A 5145 Å Ar+ laser beam, focused to a 1.0 μm beam diameter, with incident intensities of 5–250 mW, scanned …
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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H01L39/2422Processes for depositing or forming superconductor layers
    • H01L39/2454Processes for depositing or forming superconductor layers characterised by the substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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