Fisanick et al., 1988 - Google Patents
CW laser etching of Ba2YCu3O7 filmsFisanick et al., 1988
- Document ID
- 15835835813883708319
- Author
- Fisanick G
- Brasen D
- Opila R
- Moore R
- Mankiewich P
- Skocpol W
- Howard R
- Hong M
- O’Bryan H
- Publication year
- Publication venue
- AIP Conference Proceedings
External Links
Snippet
Laser induced etching has been used to pattern 2000–7000 Å thick films of the superconducting perovskite Ba2YCu3O7 and its amorphous precursor. A 5145 Å Ar+ laser beam, focused to a 1.0 μm beam diameter, with incident intensities of 5–250 mW, scanned …
- 238000010329 laser etching 0 title description 3
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
- H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
- H01L39/2422—Processes for depositing or forming superconductor layers
- H01L39/2454—Processes for depositing or forming superconductor layers characterised by the substrate
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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