[go: up one dir, main page]

Lyahovitskaya et al., 1999 - Google Patents

Post-growth, In doping of CdTe single crystals via vapor phase

Lyahovitskaya et al., 1999

Document ID
15600245699676151553
Author
Lyahovitskaya V
Kaplan L
Goswami J
Cahen D
Publication year
Publication venue
Journal of crystal growth

External Links

Snippet

We have developed a new, efficient method to dope bulk single crystals of CdTe by In, via gas phase diffusion, using In4Te3 as the source. Doping was carried out on crystals of very high resistivity (> 5MΩcm), following annealing in the temperature range of 350–1000° C …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed material
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions

Similar Documents

Publication Publication Date Title
McCluskey et al. Defects in zno
Sasaki et al. Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
Zhang et al. Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy
Luong et al. Making germanium, an indirect band gap semiconductor, suitable for light-emitting devices
Gao et al. Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats
Adhikari et al. Optical properties of ZnO deposited by atomic layer deposition on sapphire: a comparison of thin and thick films
Saucedo et al. Growth and properties of CdTe: Bi-doped crystals
Oe Metalorganic vapor phase epitaxial growth of metastable GaAs1− xBix alloy
Giles et al. The effects of a high‐temperature anneal on the electrical and optical properties of bulk CdTe: In
Giles et al. Low‐temperature photoluminescence study of doped CdTe films grown by photoassisted molecular‐beam epitaxy
Xiang et al. Oxygen-related deep level defects in solid-source MBE grown GaInP
Nishio et al. Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE
Lyahovitskaya et al. Post-growth, In doping of CdTe single crystals via vapor phase
Murthy et al. Residual impurities in GaN substrates and epitaxial layers grown by various techniques
Mohmad et al. Room temperature photoluminescence intensity enhancement in GaAs1‐xBix alloys
Nishimura et al. Growth of GaN on Si substrates–roles of BP thin layer
Du Defects in AlSb: A density functional study
Nagahama et al. Lpe growth of Hgl− xCdxTe using conventional slider boat and effects of annealing on properties of the epilayers
Zhao et al. Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
Uchida et al. Stoichiometry control of ZnTe single crystals by the vapor pressure-controlled wafer-annealing method
Reinhold et al. Post growth n-type doping of ZnSe-bulk single crystals
Hamila et al. Clustering effects in optical properties of BGaAs/GaAs epilayers
Procházková et al. Effect of rare earth addition on liquid phase epitaxial InP-based semiconductor layers
Pan et al. Optical investigation of nitrogen ion implanted bulk ZnO
Karczewski et al. Indium doping of CdTe grown by molecular beam epitaxy