Malykhin et al., 2023 - Google Patents
Electrical resistivity of coatings of quasicrystalline and crystalline phases of the Ti—Zr—Ni system in the temperature range 4–300 KMalykhin et al., 2023
- Document ID
- 15417603118851798282
- Author
- Malykhin S
- Kopylets I
- Khadzhay G
- Kondratenko V
- Surovitskiy S
- Devizenko O
- Kislitsa M
- Bogdanov Y
- Vovk R
- Borisova S
- Publication year
- Publication venue
- Low Temperature Physics
External Links
Snippet
The temperature dependence of the electrical resistivity in the temperature range from 4.4 to 300 K for Ti 41 Zr 41 Ni 18 (at.%) thin coatings of different crystal perfection and phase composition was studied. The coatings were deposited by magnetron sputtering with …
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
- H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
- H01L39/2422—Processes for depositing or forming superconductor layers
- H01L39/2454—Processes for depositing or forming superconductor layers characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ikeda et al. | Anomalous Hall effect in polycrystalline Mn3Sn thin films | |
| Kovács et al. | Effect of the substrate on the insulator–metal transition of vanadium dioxide films | |
| Yong et al. | Robust topological surface state in Kondo insulator SmB6 thin films | |
| Sudheer et al. | A study of growth and thermal dewetting behavior of ultra-thin gold films using transmission electron microscopy | |
| Song et al. | Energy storage in BaBi4Ti4O15 thin films with high efficiency | |
| Granz et al. | Granular L1 FePt-B and FePt-B-Ag (001) thin films for heat assisted magnetic recording | |
| Putero et al. | Unusual crystallization behavior in Ga-Sb phase change alloys | |
| Misják et al. | Electron scattering mechanisms in Cu-Mn films for interconnect applications | |
| Sato et al. | Metamagnetic behavior in L10-MnAl synthesized by the post annealing of electrodeposited MnAl powder | |
| Ha et al. | Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films | |
| Barshilia et al. | Thermal stability of TiAlN∕ TiAlON∕ Si3N4 tandem absorbers prepared by reactive direct current magnetron sputtering | |
| Starodubov et al. | Magnetron co-sputtered μm-thick Mo–Cu films as structural material with low heat extension for key parts of high-power millimeter-band vacuum microelectronic devices | |
| Fardin et al. | Enhanced tunability of magnetron sputtered Ba0. 5Sr0. 5TiO3 thin films on c-plane sapphire substrates | |
| Rawal et al. | Properties of W–Ge–N as a diffusion barrier material for Cu | |
| Howard et al. | Thermal annealing of DC sputtered Nb3Sn and V3Si thin films for superconducting radio-frequency cavities | |
| Hur et al. | Effect of the deposition temperature on temperature coefficient of resistance in CuNi thin film resistors | |
| Malykhin et al. | Electrical resistivity of coatings of quasicrystalline and crystalline phases of the Ti—Zr—Ni system in the temperature range 4–300 K | |
| Perzanowski et al. | Chemical order and crystallographic texture of FePd: Cu thin alloy films | |
| Baskaran et al. | High upper critical field in disordered niobium nitride superconductor | |
| Morley et al. | Development of a cosputter-evaporation chamber for Fe–Ga films | |
| Niemelä et al. | Suppressed grain-boundary scattering in atomic layer deposited Nb: TiO2 thin films | |
| Song et al. | Microstructure evolution determined by the crystalline phases competition in self-assembled WO3-BiVO4 hetero nanostructures | |
| Liu et al. | Characterization of the phases and morphology in synthesizing Cu2-xSe and CuSe films | |
| Iwanaka et al. | New deposition method of MgB2 thin film with thermal evaporation of Mg and sputtering of B | |
| Zhang et al. | Effects of partial substitution of cations on electrical properties of Mn-Co-Ni-O thin films |