Ingels et al., 1994 - Google Patents
A CMOS 18 THz/spl Omega/248 Mb/s transimpedance amplifier and 155 Mb/s LED-driver for low cost optical fiber linksIngels et al., 1994
- Document ID
- 15397471150728483444
- Author
- Ingels M
- Van der Plas G
- Crols J
- Steyaert M
- Publication year
- Publication venue
- IEEE Journal of Solid-State Circuits
External Links
Snippet
The realization of a complete low cost CMOS optical fiber link using a LED and PIN as optical components is presented. The driver and receiver are realized in a standard 0.8/spl mu/m digital CMOS process which makes integration with a DSP possible. The driver is a …
- 239000003365 glass fiber 0 title abstract description 8
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—Dc amplifiers in which all stages are dc-coupled
- H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
- H03F3/3432—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors
- H03F3/3435—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3069—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45392—Indexing scheme relating to differential amplifiers the AAC comprising resistors in the source circuit of the AAC before the common source coupling
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ingels et al. | A CMOS 18 THz/spl Omega/248 Mb/s transimpedance amplifier and 155 Mb/s LED-driver for low cost optical fiber links | |
| JP4472874B2 (en) | Detection circuit | |
| Hermans et al. | A high-speed 850-nm optical receiver front-end in 0.18-/spl mu/m CMOS | |
| Schrodinger et al. | A fully integrated CMOS receiver front-end for optic Gigabit Ethernet | |
| Neuhauser et al. | Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links-design and realization | |
| US7042295B2 (en) | Low-voltage, low-power transimpedance amplifier architecture | |
| US6879217B2 (en) | Triode region MOSFET current source to bias a transimpedance amplifier | |
| JP3394371B2 (en) | Insulated transmission device | |
| US6639472B2 (en) | High bandwidth, low power, single stage cascode transimpedance amplifier for short haul optical links | |
| Bozorgi et al. | Analog front end of 50-Gb/s SiGe BiCMOS opto-electrical receiver in 3-D-integrated silicon photonics technology | |
| Ohara et al. | Bipolar monolithic amplifiers for a gigabit optical repeater | |
| Li et al. | 10-Gb/s modulator drivers with local feedback networks | |
| Schneider et al. | Three-stage burst-mode transimpedance amplifier in deep-sub-/spl mu/m CMOS technology | |
| Hermans et al. | A gigabit optical receiver with monolithically integrated photodiode in 0.18 μm CMOS | |
| US6768384B1 (en) | High-speed differential preamplifier | |
| Guckenberger et al. | A DC-coupled low-power transimpedance amplifier architecture for Gb/s communication system applications | |
| JP2003198279A (en) | Monitor circuit and optical receiver | |
| Mandegaran et al. | A breakdown voltage doubler for high voltage swing drivers | |
| Seidl et al. | Simple feedback network for bandwidth enhancement of transimpedance amplifiers | |
| Micusik et al. | 130dB-DR transimpedance amplifier with monotonic logarithmic compression and high-current monitor | |
| JP2002290168A (en) | Optical receiver | |
| Plevridis et al. | Monolithic amplifier with AGC and differential output for 622 Mbit/s optical communications | |
| Tsai | A 20mW 85dB/spl Omega/1.25 Gb/s CMOS transimpedance amplifier with photodiode capacitance cancellation | |
| US6885247B2 (en) | Current amplifier | |
| Rogers | A single-chip 200Mb/s fiber optic receiver circuit |