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Lu et al., 2017 - Google Patents

High-performance double-gate $\alpha $-InGaZnO ISFET pH sensor using a HfO2 gate dielectric

Lu et al., 2017

Document ID
15299475077520280892
Author
Lu C
Hou T
Pan T
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

In this paper, we present a high-performance double-gate (DG) amorphous indium-gallium- zinc-oxide (α-InGaZnO) ion-sensitive field-effect transistor (ISFET) using three HfO 2 gate dielectric thicknesses as a top gate (TG). The DG structure α-InGaZnO TFTs with a 40-nm TG …
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
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    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs
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    • G01N27/12—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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    • G01N33/48—Investigating or analysing materials by specific methods not covered by the preceding groups biological material, e.g. blood, urine; Haemocytometers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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