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Dalmasso et al., 2000 - Google Patents

Green electroluminescent (Ga, In, Al) N LEDs grown on Si (111)

Dalmasso et al., 2000

Document ID
15204393376959202628
Author
Dalmasso S
Feltin E
De Mierry P
Beaumont B
Gibart P
Leroux M
Publication year
Publication venue
Electronics Letters

External Links

Snippet

The authors report on GaInN/GaN green electroluminescent diodes (λ= 508 nm) grown on Si (111) substrate. The IV characteristics of this LED at room temperature are contrasted with a similar diode grown on sapphire. The turn-on voltage is 6.8 V and the operating voltage is …
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