[go: up one dir, main page]

Heumann et al., 1968 - Google Patents

Diffusion masking of silicon nitride and silicon oxynitride films on Si

Heumann et al., 1968

Document ID
15182401324791413548
Author
Heumann F
Brown D
Mets E
Publication year
Publication venue
Journal of The Electrochemical Society

External Links

Snippet

ABSTRACT A qualitative study of the masking properties of thin (~ 1500A) silicon nitride and silicon oxynitride films on Si is presented. A range of diffusion conditions was studied for doping sources including B, P, Ga, and As. Silicon nitride was not found to be a diffusion …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Similar Documents

Publication Publication Date Title
Bower et al. Growth kinetics observed in the formation of metal silicides on silicon
US3511727A (en) Vapor phase etching and polishing of semiconductors
Chu Gallium nitride films
US4411734A (en) Etching of tantalum silicide/doped polysilicon structures
US5603779A (en) Bonded wafer and method of fabrication thereof
US3510369A (en) Selective diffusion masking process
EP0202240B1 (en) Coating of iii-v and ii-vi compound semiconductors
Heumann et al. Diffusion masking of silicon nitride and silicon oxynitride films on Si
US4344985A (en) Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US2974073A (en) Method of making phosphorus diffused silicon semiconductor devices
Dumin et al. Autodoping of silicon films grown epitaxially on sapphire
US3316130A (en) Epitaxial growth of semiconductor devices
Takigawa et al. Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B2H6-PH3-H2 System
US6100149A (en) Method for rapid thermal processing (RTP) of silicon substrates
US4948751A (en) Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor
US3966513A (en) Method of growing by epitaxy from the vapor phase a material on substrate of a material which is not stable in air
Busen et al. Ellipsometric Investigations of Boron‐Rich Layers on Silicon
Friedrich et al. Oxide degradation during selective epitaxial growth of silicon
Sato Formation of the conductive layer near the surface of semi-insulating GaAs covered with oxide film
US3397094A (en) Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere
JPS6315442A (en) Semiconductor substrate
JPH0616501B2 (en) Device manufacturing method
US3342619A (en) Method for growing germania films
Spitzer et al. Native oxide mask for zinc diffusion in gallium arsenide
JPS5812340A (en) Manufacture of semiconductor device