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Vargas et al., 2013 - Google Patents

Stoichiometry behavior of TaN, TaCN and TaC thin films produced by magnetron sputtering

Vargas et al., 2013

Document ID
15154561196943141662
Author
Vargas M
Castillo H
Restrepo-Parra E
De La Cruz W
Publication year
Publication venue
Applied surface science

External Links

Snippet

Thin films were synthesized in a magnetron sputtering system using a target of Ta with 99.99% purity and silicon substrates (111). The gases used for the film growth were (Ar+ N2),(Ar+ CH4+ N2) and (Ar+ CH4) mixtures for TaN, TaCN and TaC, respectively. The …
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    • C—CHEMISTRY; METALLURGY
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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