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Quinones et al., 2000 - Google Patents

Design, fabrication, and analysis of SiGeC heterojunction PMOSFETs

Quinones et al., 2000

Document ID
15002984536324926800
Author
Quinones E
John S
Ray S
Banerjee S
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

We present the evaluation of the strain-stabilizing capabilities of C in the Si/sub 1-x/Ge/sub x/system. To demonstrate these effects, we have designed Si/sub 1-xy/Ge/sub x/C/sub y/heterojunction PMOSFET devices over a range of Ge concentrations, with thicknesses that …
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