[go: up one dir, main page]

JAYARAM et al., 2004 - Google Patents

RF CMOS 0.5 µm Low Noise Amplifier and Mixer Design

JAYARAM et al., 2004

View PDF
Document ID
14784607941543596632
Author
JAYARAM V
Tech B
Publication year

External Links

Snippet

RF CMOS 0.5 µm Low Noise Amplifier and Mixer Design Page 1 RF CMOS 0.5 µm Low Noise Amplifier and Mixer Design By VIKRAM JAYARAM , B.Tech Signal Processing and Communication Group & UMESH UTHAMAN , BE Nanomil FINAL PROJECT Presented to Dr …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041—Functional aspects of demodulators
    • H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements

Similar Documents

Publication Publication Date Title
TWI320994B (en) Low noise amplifier, method for amplifying a radio frequency signal and radio frequency receiver system
US7110742B2 (en) Low noise amplifier with constant input impedance
US9312818B2 (en) Low-noise amplifier
US7109801B2 (en) Low gate oxide stress power amplifier
Cha et al. A low power, high gain LNA topology
Kim et al. A low noise amplifier simultaneously achieving input impedance and minimum noise matching
Nadia et al. A low power low noise CMOS amplifier for Bluetooth applications
CN111903054B (en) Single-ended to differential amplifier and radio frequency receiver
Dafna et al. A wideband 95–140 GHz high efficiency PA in 28nm CMOS
JAYARAM et al. RF CMOS 0.5 µm Low Noise Amplifier and Mixer Design
KR20150087669A (en) Concurrent multi-band rf amplifier circuit
Hwang et al. An inductorless wideband noise-cancelling CMOS low noise amplifier with variable-gain technique for DTV tuner application
Bhardwaj et al. CMOS LNA based on tunable active inductor for UWB applications
Hwang et al. A differential multi-band CMOS low noise amplifier with noise cancellation and interference rejection
Tarighat et al. Wideband Input Matching CMOS Low-Noise Amplifier with Noise and Distortion Cancellation
Sun et al. A 2.4 GHz CMOS image-reject low noise amplifier
Yang et al. A design of CMOS broadband amplifier with high-Q active inductor
Loong et al. 1.575 GHz to 2.48 GHz multi-standard low noise amplifier using 0.18-µm CMOS with on-chip matching
EP1524764A1 (en) Power amplifier having enhanced swing cascode architecture
Geddada et al. Fully balanced low-noise transconductance amplifiers with P1dB> 0dBm in 45nm CMOS
Ravindran et al. Design of cascaded common source low noise amplifier for s-band using transconductance feedback
Jou et al. Design of a fully integrated high linearity dual-band CMOS LNA
TWI692197B (en) Mixer module
Shie et al. UWB LNA and mixer with an active balun in 0.18 μm CMOS process
KR101609692B1 (en) Low Noise Amplifier