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Ezhilvalavan et al., 1998 - Google Patents

Conduction mechanisms in amorphous and crystalline Ta 2 O 5 thin films

Ezhilvalavan et al., 1998

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Document ID
14475296789143987609
Author
Ezhilvalavan S
Tseng T
Publication year
Publication venue
Journal of applied physics

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Electrical properties and leakage current mechanisms of amorphous and polycrystalline tantalum pentoxide (Ta 2 O 5) films were studied. Ta 2 O 5 thin films were deposited on Pt/SiO 2/n-Si substrate by reactive magnetron sputtering and then annealed at temperatures …
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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