[go: up one dir, main page]

Smith et al., 1981 - Google Patents

Measurement of GaAs field‐effect transistor electronic impulse response by picosecond optical electronics

Smith et al., 1981

Document ID
14071915774766815618
Author
Smith P
Auston D
Augustyniak W
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

Direct time-resolved measurements of the linear and nonlinear electronic impulse response of a high-speed gallium arsenide metal semiconductor field-effect transistor have been made by using picosecond optical pulses to drive high-speed photoconducting electronic …
Continue reading at pubs.aip.org (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques

Similar Documents

Publication Publication Date Title
Smith et al. Measurement of GaAs field‐effect transistor electronic impulse response by picosecond optical electronics
US5142224A (en) Non-destructive semiconductor wafer probing system using laser pulses to generate and detect millimeter wave signals
Valdmanis et al. Subpicosecond electrooptic sampling: Principles and applications
US4482863A (en) Apparatus and method for measuring electronic response of high speed devices and materials
Frankel et al. Optoelectronic transient characterization of ultrafast devices
Auston Ultrafast optoelectronics
Weingarten et al. Direct electro-optic sampling of GaAs integrated circuits
Cooper et al. Picosecond optoelectronic measurement of the high-frequency scattering parameters of a GaAs FET
Frankel et al. Ultrahigh-bandwidth vector network analyzer based on external electro-optic sampling
Hung et al. Millimeter-wave monolithic integrated circuit characterization by a picosecond optoelectronic technique
Auston Picosecond photoconductivity: High-speed measurements of devices and materials
Lee et al. Picosecond photoconductivity and its applications
Rodwell et al. Gate propagation delay and logic timing of GaAs integrated circuits measured by electro-optic sampling
Heutmaker et al. Electrooptic sampling of a packaged high-speed GaAs integrated circuit
Whitaker et al. External electro-optic integrated circuit probing
Matloubian et al. Picosecond optoelectronic measurement of S parameters and optical response of an AlGaAs/GaAs HBT
Nagel et al. Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene
Hwang et al. Photoconductive sampling with an integrated source follower/amplifier
Huang et al. On-wafer photoconductive sampling of MMICs
Lawton et al. Optically strobed sampling oscilloscope
US4870295A (en) Photoconductive circuit element pulse generator
Paulter et al. Optoelectronic measurements of picosecond electrical pulse propagation in coplanar waveguide transmission lines
Paulter High-speed optoelectronic pulse generation and sampling system
Pfeifer et al. Generation and detection of picosecond electric pulses with freely positionable photoconductive probes
CA2020733C (en) Non-destructive semiconductor wafer probing system using laser pulses to generate and detect millimeter-wave signals