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Truong et al., 2020 - Google Patents

Hydrogenation mechanisms of poly‐Si/SiOx passivating contacts by different capping layers

Truong et al., 2020

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Document ID
1385308232257624921
Author
Truong T
Yan D
Chen W
Tebyetekerwa M
Young M
Al-Jassim M
Cuevas A
Macdonald D
Nguyen H
Publication year
Publication venue
Solar RRL

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Herein, posttreatment techniques of phosphorus‐doped poly‐Si/SiOx passivating contacts, including forming gas annealing (FGA), atomic layer deposition (ALD) of hydrogenated aluminum oxide (AlOx: H), and plasma‐enhanced chemical vapor deposition (PECVD) of …
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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