[go: up one dir, main page]

Yang et al., 2020 - Google Patents

Monolithic interface contact engineering to boost optoelectronic performances of 2D semiconductor photovoltaic heterojunctions

Yang et al., 2020

Document ID
13768826795286275952
Author
Yang S
Cha J
Kim J
Lee D
Huh W
Kim Y
Lee S
Park H
Jeong H
Hong S
Lee G
Lee C
Publication year
Publication venue
Nano letters

External Links

Snippet

In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to …
Continue reading at pubs.acs.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048—Carbon nanotubes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/42—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture

Similar Documents

Publication Publication Date Title
Yang et al. Monolithic interface contact engineering to boost optoelectronic performances of 2D semiconductor photovoltaic heterojunctions
Tan et al. Broken-gap PtS2/WSe2 van der Waals heterojunction with ultrahigh reverse rectification and fast photoresponse
Ricciardulli et al. Two-dimensional violet phosphorus: a p-type semiconductor for (opto) electronics
Fang et al. Two-dimensional Cs2AgBiBr6/WS2 heterostructure-based photodetector with boosted detectivity via interfacial engineering
Sahoo et al. Bilayer lateral heterostructures of transition-metal dichalcogenides and their optoelectronic response
Tao et al. Fabrication of 1D Te/2D ReS2 mixed-dimensional van der waals pn heterojunction for high-performance phototransistor
Beck et al. Emerging opportunities for electrostatic control in atomically thin devices
Wu et al. Photoinduced doping to enable tunable and high-performance anti-ambipolar MoTe2/MoS2 heterotransistors
Zhang et al. Single-atom vacancy doping in two-dimensional transition metal dichalcogenides
Zhang et al. Mono-elemental properties of 2D black phosphorus ensure extended charge carrier lifetimes under oxidation: Time-domain ab initio analysis
Linghu et al. High-throughput computational screening of vertical 2D van der Waals heterostructures for high-efficiency excitonic solar cells
Tang et al. Electronic properties of van der Waals heterostructure of black phosphorus and MoS2
Srivastava et al. Van der Waals broken-gap p–n heterojunction tunnel diode based on black phosphorus and rhenium disulfide
Larentis et al. Reconfigurable complementary monolayer MoTe2 field-effect transistors for integrated circuits
Brotons-Gisbert et al. Nanotexturing to enhance photoluminescent response of atomically thin indium selenide with highly tunable band gap
Zhang et al. Interlayer transition and infrared photodetection in atomically thin type-II MoTe2/MoS2 van der Waals heterostructures
Kim et al. Area-selective chemical doping on solution-processed MoS2 thin-film for multi-valued logic gates
Bai et al. Highly tunable carrier tunneling in vertical graphene–WS2–graphene van der Waals heterostructures
Du et al. Switchable photoresponse mechanisms implemented in single van der Waals semiconductor/metal heterostructure
Mitta et al. Gate-modulated ultrasensitive visible and near-infrared photodetection of oxygen plasma-treated WSe2 lateral pn-homojunctions
Pan et al. Reexamination of the Schottky barrier heights in monolayer MoS2 field-effect transistors
Lau et al. Quantum transport in two-dimensional WS2 with high-efficiency carrier injection through indium alloy contacts
Cho et al. Two-dimensional WSe2/MoS2 p–n heterojunction-based transparent photovoltaic cell and its performance enhancement by fluoropolymer passivation
Qi et al. Continuously tuning electronic properties of few-layer molybdenum ditelluride with in situ aluminum modification toward ultrahigh gain complementary inverters
Park et al. Photovoltaic field-effect transistors using a MoS2 and organic rubrene van der Waals hybrid