[go: up one dir, main page]

Zaborowski et al., 2012 - Google Patents

Development of si nanowire chemical sensors

Zaborowski et al., 2012

View PDF
Document ID
13712147177017573819
Author
Zaborowski M
Dumania P
Tomaszewski D
Czupryniak J
Ossowski T
Kokot M
Pałetko P
Gotszalk T
Grabiec P
Publication year
Publication venue
Procedia Engineering

External Links

Snippet

Development of a design and technology of sensors for analysis of a small volume of aqueous solutions is presented in the work. A nanowire junctionless n-type FET has been manufactured for this purpose. The fabrication process and SEM examination have been …
Continue reading at www.sciencedirect.com (PDF) (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148Integrated circuits therefor, e.g. fabricated by CMOS processing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28Electrolytic cell components
    • G01N27/30Electrodes, e.g. test electrodes; Half-cells
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416Systems
    • G01N27/42Measuring disposition or liberation of materials from an electrolyte; Coulometry, i.e. measuring coulomb-equivalent of material in an electrolyte
    • G01N27/423Coulometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/27Association of two or more measuring systems or cells, each measuring a different parameter, where the measurement results may be either used independently, the systems or cells being physically associated, or combined to produce a value for a further parameter, e.g. electrochemical electrode arrays
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
    • G01N27/22Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating capacitance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
    • G01N27/04Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by the preceding groups
    • G01N33/48Investigating or analysing materials by specific methods not covered by the preceding groups biological material, e.g. blood, urine; Haemocytometers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation

Similar Documents

Publication Publication Date Title
TWI245073B (en) Biological identification system with integrated sensor chip
US10126263B2 (en) Wide dynamic range fluid sensor based on nanowire platform
Zhang et al. Surface functionalization of ion-sensitive floating-gate field-effect transistors with organic electronics
Tian et al. Ultrasensitive protein detection using lithographically defined Si multi-nanowire field effect transistors
US20100072976A1 (en) Sensing element, manufacturing method thereof, and biological detection system employing such sensing element
US20140054651A1 (en) Reliable nanofet biosensor process with high-k dielectric
RU2650087C2 (en) Integrated circuit with sensing transistor array, sensing apparatus and measuring method
Dong et al. Fabrication and testing of ISFET based pH sensors for microliter target solutions
LU101020B1 (en) Ion-sensitive field effect transistor
CN104781658A (en) Integrated circuit with nanowire chemfet-sensors, sensing apparatus, measuring method and manufacturing method
Gupta et al. Size independent sensitivity to biomolecular surface density using nanoscale CMOS technology transistors
Schwartz et al. DNA detection with top–down fabricated silicon nanowire transistor arrays in linear operation regime
Zaborowski et al. Development of si nanowire chemical sensors
US20180275093A1 (en) Biosensor electrode having three-dimensional structured sensing surfaces
Lale et al. Top-down integration of suspended N+/P/N+ silicon-nanowire-based ion-sensitive field effect transistors for pH analysis at the submicronic scale
Adam et al. Novel in-house fabrication of nano lab-on-chip devices
Hussin et al. Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application
Rigante et al. High-k dielectric FinFETs towards sensing integrated circuits
JP5737655B2 (en) Semiconductor sensor
Zang et al. pH sensing comparison of vapor and solution APTES coated Si nanograting FETs
Parmar et al. Electrical Characterization and Study of Current Drift Phenomena and Hysteresis Mechanism in Junctionless Ion-Sensitive Field-Effect Transistor
Choksi et al. Modeling and simulation of ISFET using TCAD tool for various sensing films
Rahman et al. Top-down fabrication of silicon nanowire sensor using electron beam and optical mixed lithography
Lu et al. DNA Biosensor Applications for Poly-Silicon Nanowire Field-Effect Transistors
Rollo A new design of an electrochemical (bio) sensor: High Aspect Ratio Fin-FET