Schlom et al., 1989 - Google Patents
Reduction of gallium‐related oval defectsSchlom et al., 1989
- Document ID
- 13471618699327105880
- Author
- Schlom D
- Lee W
- Ma T
- Harris Jr J
- Publication year
- Publication venue
- Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
External Links
Snippet
A novel gallium effusion cell consisting of a sapphire crucible in a variable temperature profile furnace was used to grow GaAs layers. The effect of the gallium source temperature profile on gallium source‐related oval defects was investigated. By minimizing gallium …
- 229910052733 gallium 0 title abstract description 75
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed material
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109402731B (en) | High-purity semi-insulating silicon carbide crystal growth device and method thereof | |
| US6093245A (en) | Method for growing crystal | |
| US20100061914A1 (en) | GUIDED DIAMETER SiC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE | |
| Schlom et al. | Reduction of gallium‐related oval defects | |
| US6110279A (en) | Method of producing single-crystal silicon carbide | |
| JP4174847B2 (en) | Single crystal manufacturing method | |
| EP0031918B1 (en) | Method and apparatus for manufacturing a device by evaporation | |
| GB2070968A (en) | Controlled atmosphere for crystal growth | |
| JPH08295595A (en) | Single crystal growth equipment | |
| JP4052678B2 (en) | Large silicon carbide single crystal growth equipment | |
| CN107109692B (en) | Manufacturing method of zone melting single crystal silicon for solar cell and solar cell | |
| GB2162766A (en) | Methods of and apparatus for the melting of silicon | |
| Harada et al. | Epitaxial growth of Ag deposited on air-cleaved MgO (100) surface by molecular beam deposition | |
| CN116590708B (en) | Graphite material with silicon carbide coating and preparation method and application thereof | |
| Duke et al. | Displacements parallel to the surface of reconstructed GaAs (110) | |
| Tamura et al. | Fabrication of poly-crystalline silicon films using plasma spray method | |
| KR20030081364A (en) | Apparatus and process for the preparation of low-iron single crystal silicon substantially free of agglomerated intrinsic point defects | |
| CN113005510A (en) | Preparation method of silicon carbide single crystal | |
| Klews et al. | Graphoepitaxial recrystallization of Bi films on SiO and C substrates with a surface relief structure | |
| Belouet | Growth of polysilicon sheets by the RAD process | |
| JP3717562B2 (en) | Single crystal manufacturing method | |
| JPS5912015B2 (en) | semiconductor equipment | |
| KR20240080952A (en) | Large diameter single crystal and method of manufacturing for growing large diameter single crystal | |
| KR960004590B1 (en) | Surface stabilization method of porous silicon substrate | |
| Goldstein et al. | Preparation of P-type indium phosphide films by close space vapor transport |