Jung et al., 2017 - Google Patents
Uniform dehydrogenation of amorphous silicon thin films using a wide thermal annealing systemJung et al., 2017
- Document ID
- 12894070654343252153
- Author
- Jung Y
- Seong S
- Lee T
- Ahn J
- Kim T
- Yeo W
- Park I
- Publication year
- Publication venue
- Semiconductor Science and Technology
External Links
Snippet
To prevent ablation caused by sudden hydrogen eruption during crystallization of hydrogenated amorphous Si (a-Si: H) thin films, a wide dehydrogenation thermal annealing (wDTA) system was developed to reduce hydrogen content in a-Si: H film prior to its …
- 229910021417 amorphous silicon 0 title abstract description 48
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Ishihara et al. | Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9) 2S2 | |
Seo et al. | Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition | |
Zhu et al. | Influence of growth temperature on MoS2 synthesis by chemical vapor deposition | |
Kim et al. | Direct synthesis of large-area continuous ReS2 films on a flexible glass at low temperature | |
Jiang et al. | Zinc nitride films prepared by reactive RF magnetron sputtering of zinc in nitrogen containing atmosphere | |
Ishihara et al. | Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9) 2S2 | |
Yamamoto et al. | Heat resistance of Ga-doped ZnO thin films for application as transparent electrodes in liquid crystal displays | |
Lieten et al. | Structural and optical properties of amorphous and crystalline GeSn layers on Si | |
Nguyen et al. | Formation of (100)-oriented large polycrystalline silicon thin films with multiline beam continuous-wave laser lateral crystallization | |
Shin et al. | Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering | |
Terai et al. | Xenon flash lamp annealing of poly-Si thin films | |
Zhang et al. | Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate | |
Prekodravac et al. | Monolayer graphene films through nickel catalyzed transformation of fullerol and graphene quantum dots: a Raman spectroscopy study | |
Jacobs et al. | Polarity dependent implanted p-type dopant activation in GaN | |
Zhu et al. | Cadmium stannate conductive layer with high optical transmittance and tunable work function | |
Jung et al. | Ultrafast and low-temperature synthesis of patternable MoS2 using laser irradiation | |
Jung et al. | Uniform dehydrogenation of amorphous silicon thin films using a wide thermal annealing system | |
Atuchin et al. | Structural and vibrational properties of PVT grown BiTeCl microcrystals | |
Jakkala et al. | Bandgap tuning and spectroscopy analysis of In x Ga (1− x) N thin films grown by RF sputtering method | |
Takeuchi et al. | Thermal conductivity characteristics in polycrystalline silicon with different average sizes of grain and nanostructures in the grains by UV Raman spectroscopy | |
O'Hanlon et al. | Effect of annealing on the development of fully transparent ternary VO-Na-Si mixed metal oxide thin films from polymer-assisted dip-coated V2O5 | |
Jahed et al. | Deposition and parametric analysis of RF sputtered ZnO: Al thin films with very low resistivity | |
Aguilera et al. | Cu doping concentration effect on the physical properties of CdS thin films obtained by the CBD technique | |
So et al. | Crystallization of amorphous silicon thin films using self-limiting ALD of nickel oxide | |
Sakai et al. | Graphene growth in microwave-excited atmospheric pressure remote plasma enhanced chemical vapor deposition |