San et al., 2013 - Google Patents
Silicon–glass-based single piezoresistive pressure sensors for harsh environment applicationsSan et al., 2013
View PDF- Document ID
- 12532296518184870317
- Author
- San H
- Zhang H
- Zhang Q
- Yu Y
- Chen X
- Publication year
- Publication venue
- Journal of Micromechanics and Microengineering
External Links
Snippet
Abstract Silicon–glass (Si–glass)-based single piezoresistive pressure sensors were designed and fabricated by standard MEMS technology. The single piezoresistive sensing element was designed to be on the lower surface of the silicon diaphragm and be vacuum …
- 239000011521 glass 0 title abstract description 39
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress in general
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| San et al. | Silicon–glass-based single piezoresistive pressure sensors for harsh environment applications | |
| CN105241369B (en) | MEMS strain gauge chip and manufacturing process thereof | |
| CN106124117B (en) | A dual cavity pressure gauge chip and its manufacturing process | |
| Lou et al. | Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements | |
| CN103278270B (en) | Silicon-glass micro pressure sensor chip of island membrane self-packaging structure and manufacturing method | |
| CN104931163B (en) | A kind of double soi structure MEMS pressure sensor chips and preparation method thereof | |
| CN105444931B (en) | SOI presser sensor chips based on sacrificial layer technology and its manufacturing method | |
| CN107673306B (en) | A kind of preparation method of MEMS pressure sensor | |
| Wang et al. | Package-friendly piezoresistive pressure sensors with on-chip integrated packaging-stress-suppressed suspension (PS3) technology | |
| CN101266176A (en) | Silicon-on-insulator silicon-bonded high-temperature pressure sensor chip and manufacturing method | |
| CN104535253A (en) | High temperature pressure sensor and process method thereof | |
| CN109342836B (en) | Production process based on piezoelectric piezoresistive broadband high-field-intensity miniature electric field sensor | |
| CN105241600A (en) | MEMS pressure meter chip and manufacturing process thereof | |
| Li et al. | A novel SOI pressure sensor for high temperature application | |
| CN101271028A (en) | Pressure sensor chip and method based on silicon-silicon bonding and silicon-on-insulator | |
| San et al. | Self-packaging fabrication of silicon–glass-based piezoresistive pressure sensor | |
| Kumar et al. | Effect of piezoresistor configuration on output characteristics of piezoresistive pressure sensor: an experimental study | |
| CN104089642B (en) | Piezoresistive acceleration and pressure integrated sensor and manufacturing method thereof | |
| CN104062059A (en) | MEMS piezoresistive pressure sensor and manufacturing method thereof | |
| CN112723301A (en) | High-frequency-response pressure sensor chip for aviation and preparation method thereof | |
| Tang et al. | Structure design and optimization of SOI high-temperature pressure sensor chip | |
| CN104062462A (en) | MEMS piezoresistive acceleration sensor and manufacturing method thereof | |
| CN105021328A (en) | Piezoresistive pressure sensor compatible with CMOS process and preparation method of piezoresistive pressure sensor | |
| CN104280186B (en) | The preparation of temperature drift self compensation SOI pressure transducer and compensation method | |
| CN109341932B (en) | Pressure sensor chip and manufacturing method thereof |