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Wirth et al., 1999 - Google Patents

Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation

Wirth et al., 1999

Document ID
123766034806771644
Author
Wirth H
Panknin D
Skorupa W
Niemann E
Publication year
Publication venue
Applied physics letters

External Links

Snippet

Flash-lamp annealing was used for activation and crystal recovery of highly aluminum- implanted 6H-SiC wafers. In comparison with conventional furnace annealing, the free hole concentration can be remarkably increased at high acceptor atom concentrations (⩾ 5× 10 …
Continue reading at pubs.aip.org (other versions)

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