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Yu et al., 2020 - Google Patents

Improved DC and RF performance of novel MIS p-GaN-gated HEMTs by gate-all-around structure

Yu et al., 2020

Document ID
12329366123956085307
Author
Yu C
Hsu C
Wu M
Hsu W
Chuang C
Liu J
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

In this study, we report a novel structure of enhancement-mode metal-insulator- semiconductor high electron mobility transistor (E-mode MIS HEMT) with p-GaN gate by gate-all-around technology. The gate-all-around structure is fabricated by depositing an …
Continue reading at ieeexplore.ieee.org (other versions)

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