[go: up one dir, main page]

Kobayashi et al., 1997 - Google Patents

A novel 12-24 GHz broadband HBT distributed active balanced mixer

Kobayashi et al., 1997

Document ID
1231383016962501841
Author
Kobayashi K
Tran L
Lammert M
Block T
Oki A
Streit D
Publication year
Publication venue
1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers

External Links

Snippet

Here we present a novel HBT distributed active balanced Schottky mixer design that demonstrates octave-band balanced frequency performance in a compact 3/spl times/3.9 mm/sup 2/MMIC while operating with a reduced LO power of+ 9 dBm. The MMIC mixer …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1408Balanced arrangements with diodes
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1433Balanced arrangements with transistors using bipolar transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1441Balanced arrangements with transistors using field-effect transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041Functional aspects of demodulators
    • H03D2200/0088Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605Distributed amplifiers
    • H03F3/607Distributed amplifiers using FET's
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041Functional aspects of demodulators
    • H03D2200/0043Bias and operating point
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06Transference of modulation using distributed inductance and capacitance
    • H03D9/0608Transference of modulation using distributed inductance and capacitance by means of diodes
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001Circuit elements of demodulators
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/16Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0023Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers

Similar Documents

Publication Publication Date Title
US6469581B1 (en) HEMT-HBT doherty microwave amplifier
US5227734A (en) Broadband bipolar transistor distributed amplifier
KR100257179B1 (en) Low noise-high linearity hemt-hbt composite
US6230001B1 (en) Active commutated double balanced mixer
Tsai et al. A 0.3-25-GHz ultra-wideband mixer using commercial 0.18-μm CMOS technology
Perndl et al. A low-noise, and high-gain double-balanced mixer for 77 GHz automotive radar front-ends in SiGe bipolar technology
Zech et al. An ultra-broadband low-noise traveling-wave amplifier based on 50nm InGaAs mHEMT technology
Lai et al. An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz
US5678225A (en) Direct-coupled active balanced mixer
Kanaya et al. A 94 GHz high performance quadruple subharmonic mixer MMIC
Ryu et al. A monolithic broadband doubly balanced EHF HBT star mixer with novel microstrip baluns
Bao et al. A W-band up-conversion mixer with integrated LO frequency doublers in a 60 nm GaN technology
Verweyen et al. Coplanar integrated mixers for 77-GHz automotive applications
Yhland et al. Novel single device balanced resistive HEMT mixers
Kobayashi et al. A novel 12-24 GHz broadband HBT distributed active balanced mixer
Nelson et al. High-linearity, low DC power GaAs HBT broadband amplifiers to 11 GHz
Kobayashi et al. A novel monolithic HBT-pin-HEMT integrated circuit with HBT active feedback and pin diode variable gain control
US7265630B2 (en) Millimeter-wave unilateral low-noise amplifier
Matsuura et al. A monolithic W-band CPW rat-race mixer with HBT IF amplifier
Kobayashi et al. 15 dB gain, DC-20 GHz InP HBT balanced analog mixer and variable gain amplifier with 27 dB of dynamic range
Honjo et al. X-Band Low-Noise GaAs Monolithic Frequency Converter (Short Paper)
Kim et al. High-performance V-band cascode HEMT mixer and downconverter module
Madihian et al. 60-GHz monolithic down-and up-converters utilizing a source-injection concept
Chang et al. A V-band monolithic InP HEMT down converter [for satellite communication]
Kobayashi et al. A double-double balanced HBT Schottky diode broadband mixer at X-band