Kobayashi et al., 1997 - Google Patents
A novel 12-24 GHz broadband HBT distributed active balanced mixerKobayashi et al., 1997
- Document ID
- 1231383016962501841
- Author
- Kobayashi K
- Tran L
- Lammert M
- Block T
- Oki A
- Streit D
- Publication year
- Publication venue
- 1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers
External Links
Snippet
Here we present a novel HBT distributed active balanced Schottky mixer design that demonstrates octave-band balanced frequency performance in a compact 3/spl times/3.9 mm/sup 2/MMIC while operating with a reduced LO power of+ 9 dBm. The MMIC mixer …
- 238000006243 chemical reaction 0 abstract description 19
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1408—Balanced arrangements with diodes
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1433—Balanced arrangements with transistors using bipolar transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
- H03F3/607—Distributed amplifiers using FET's
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0043—Bias and operating point
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
- H03D9/06—Transference of modulation using distributed inductance and capacitance
- H03D9/0608—Transference of modulation using distributed inductance and capacitance by means of diodes
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0001—Circuit elements of demodulators
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
- H03G1/0023—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6469581B1 (en) | HEMT-HBT doherty microwave amplifier | |
US5227734A (en) | Broadband bipolar transistor distributed amplifier | |
KR100257179B1 (en) | Low noise-high linearity hemt-hbt composite | |
US6230001B1 (en) | Active commutated double balanced mixer | |
Tsai et al. | A 0.3-25-GHz ultra-wideband mixer using commercial 0.18-μm CMOS technology | |
Perndl et al. | A low-noise, and high-gain double-balanced mixer for 77 GHz automotive radar front-ends in SiGe bipolar technology | |
Zech et al. | An ultra-broadband low-noise traveling-wave amplifier based on 50nm InGaAs mHEMT technology | |
Lai et al. | An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz | |
US5678225A (en) | Direct-coupled active balanced mixer | |
Kanaya et al. | A 94 GHz high performance quadruple subharmonic mixer MMIC | |
Ryu et al. | A monolithic broadband doubly balanced EHF HBT star mixer with novel microstrip baluns | |
Bao et al. | A W-band up-conversion mixer with integrated LO frequency doublers in a 60 nm GaN technology | |
Verweyen et al. | Coplanar integrated mixers for 77-GHz automotive applications | |
Yhland et al. | Novel single device balanced resistive HEMT mixers | |
Kobayashi et al. | A novel 12-24 GHz broadband HBT distributed active balanced mixer | |
Nelson et al. | High-linearity, low DC power GaAs HBT broadband amplifiers to 11 GHz | |
Kobayashi et al. | A novel monolithic HBT-pin-HEMT integrated circuit with HBT active feedback and pin diode variable gain control | |
US7265630B2 (en) | Millimeter-wave unilateral low-noise amplifier | |
Matsuura et al. | A monolithic W-band CPW rat-race mixer with HBT IF amplifier | |
Kobayashi et al. | 15 dB gain, DC-20 GHz InP HBT balanced analog mixer and variable gain amplifier with 27 dB of dynamic range | |
Honjo et al. | X-Band Low-Noise GaAs Monolithic Frequency Converter (Short Paper) | |
Kim et al. | High-performance V-band cascode HEMT mixer and downconverter module | |
Madihian et al. | 60-GHz monolithic down-and up-converters utilizing a source-injection concept | |
Chang et al. | A V-band monolithic InP HEMT down converter [for satellite communication] | |
Kobayashi et al. | A double-double balanced HBT Schottky diode broadband mixer at X-band |