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Liu et al., 2000 - Google Patents

Wurtzite GaN epitaxial growth on Si (111) using silicon nitride as an initial layer

Liu et al., 2000

Document ID
12255778067398983971
Author
Liu H
Ye Z
Zhang H
Zhao B
Publication year
Publication venue
Materials research bulletin

External Links

Snippet

We report single crystalline GaN films grown on Si (111) using Si3N4 as an initial layer by a simple reactive evaporation technique. X-ray diffraction (XRD) and double crystal X-ray diffraction (DCXRD) indicate that the GaN epilayer has a wurtzite structure of high quality …
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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