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Cho et al., 2002 - Google Patents

Hole and Interface Traps in Mg-doped Al0. 1Ga0. 9N/GaN Grown by Metalorganic Chemical Vapor Deposition

Cho et al., 2002

Document ID
1217908393290208884
Author
Cho H
Hong C
Suh E
Lee H
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

Deep level traps in Mg-doped Al 0.1 Ga 0.9 N/undoped GaN heterostructures grown by metalorganic vapor deposition with different Cp 2 Mg molar flow rates are studied by deep level transient spectroscopy (DLTS). Two distinct hole traps were observed, one with an …
Continue reading at iopscience.iop.org (other versions)

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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