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Khaja et al., 2014 - Google Patents

Bulk FinFET junction isolation by heavy species and thermal implants

Khaja et al., 2014

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Document ID
11918742633590358780
Author
Khaja F
Gossmann H
Colombeau B
Thanigaivelan T
Publication year
Publication venue
2014 20th International Conference on Ion Implantation Technology (IIT)

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Snippet

One of the challenges for bulk-Si FinFET is forming the junction isolation at the 14nm node and beyond. As the fins are scaled, source-drain punch-through can occur, which causes large leakage currents. A punch-through stop (PTS) layer/structure at the bottom of the fin is …
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