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Ji et al., 2019 - Google Patents

Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m $\Omega\cdot $ cm 2/1500 V GaN Diodes

Ji et al., 2019

Document ID
1187914417575311273
Author
Ji D
Li S
Ercan B
Ren C
Chowdhury S
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

The design space of ion-implanted moat etch termination in GaN pn diodes is discussed in this study. Based on experimental data, the design window for ion-implanted moat etch termination has been carefully studied and optimized for vertical GaN pn diodes grown on …
Continue reading at ieeexplore.ieee.org (other versions)

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