[go: up one dir, main page]

Nakatani et al., 2019 - Google Patents

Millimeter-wave GaN power amplifier MMICs for 5G application

Nakatani et al., 2019

Document ID
11681255315952874184
Author
Nakatani K
Yamaguchi Y
Komatsuzaki Y
Shinjo S
Publication year
Publication venue
2019 IEEE International Symposium on Circuits and Systems (ISCAS)

External Links

Snippet

The fifth generation mobile communications (5G) are expected to accommodate the forthcoming huge traffic demands, and the massive multiple input multiple output (MIMO) technology utilizing hundreds of antenna elements has drawn attention as a key antenna …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H03F3/604—Combinations of several amplifiers using FET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q23/00—Aerials with active circuits or circuit elements integrated within them or attached to them

Similar Documents

Publication Publication Date Title
Lie et al. A review of 5G power amplifier design at cm‐wave and mm‐wave frequencies
Shakib et al. 20.6 A 28GHz efficient linear power amplifier for 5G phased arrays in 28nm bulk CMOS
US11515842B2 (en) Doherty power amplifiers and devices with low voltage driver stage in carrier-path and high voltage driver stage in peaking-path
Kang et al. Design of bandwidth-enhanced Doherty power amplifiers for handset applications
Nakatani et al. Millimeter-wave GaN power amplifier MMICs for 5G application
Park et al. Single transformer-based compact Doherty power amplifiers for 5G RF phased-array ICs
Chen et al. A broadband stacked power amplifier in 45-nm CMOS SOI technology
KR101125721B1 (en) RF power amplifiers with linearization
US10637404B2 (en) Power amplifier apparatus, envelope tracking amplifier apparatus and method of amplifying a signal
CN111480292B (en) No-load modulation high-efficiency power amplifier
Cho et al. A 16-element phased-array CMOS transmitter with variable gain controlled linear power amplifier for 5G new radio
US20100026387A1 (en) Integrated doherty type amplifier arrangement with high power efficiency
US11201591B2 (en) Asymmetric Doherty amplifier circuit with shunt reactances
Dasgupta et al. A 26 dBm 39 GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm bulk CMOS
Li et al. 5G mm-Wave front-end-module design with advanced SOI process
Wohlert et al. 8-Watt linear three-stage GaN Doherty power amplifier for 28 GHz 5G applications
Li et al. A high-efficiency 5G K/Ka-band stacked power amplifier in 45nm CMOS SOI process supporting 9Gb/s 64-QAM modulation with 22.4% average PAE
Giofre et al. A 28 GHz MMIC Doherty power amplifier in GaN on Si technology for 5G applications
Nakatani et al. A highly integrated RF frontend module including Doherty PA, LNA and switch for high SHF wide-band massive MIMO in 5G
Makhsuci et al. A review of Doherty power amplifier and load modulated balanced amplifier for 5G technology
Giofrè et al. A GaN-on-Si MMIC Doherty power amplifier for 5G applications
EP4199351A1 (en) Integrated power amplifier with bias control and harmonic termination
Costanzo et al. A GaN MMIC stacked Doherty power amplifier for space applications
de Kok et al. A review of pa-antenna co-design: Direct matching, harmonic tuning and power combining
JP4927351B2 (en) Doherty amplifier