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Sonar et al., 2008 - Google Patents

High-mobility organic thin film transistors based on benzothiadiazole-sandwiched dihexylquaterthiophenes

Sonar et al., 2008

Document ID
11651897740276779949
Author
Sonar P
Singh S
Sudhakar S
Dodabalapur A
Sellinger A
Publication year
Publication venue
Chemistry of materials

External Links

Snippet

We report here the synthesis, characterization, and organic thin-film transistor (OTFT) mobilities of 4, 7-bis (5-(5-hexylthiophen-2-yl) thiophen-2-yl) benzo [1, 2, 5] thiadiazole (DH- BTZ-4T). DH-BTZ-4T was prepared in one high-yield step from commercially available …
Continue reading at pubs.acs.org (other versions)

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    • H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0541—Lateral single gate single channel transistors with non inverted structure, i.e. the organic semiconductor layer is formed before the gate electode
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