Leng et al., 1996 - Google Patents
Spectrophotometry and beam profile reflectometry measurement of six layers in an SOI film stackLeng et al., 1996
- Document ID
- 1162490301070227691
- Author
- Leng J
- Sidorowich J
- Yoon Y
- Opsal J
- Lee B
- Cha G
- Moon J
- Lee S
- Publication year
- Publication venue
- Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
External Links
Snippet
We developed a robust measurement recipe for six layer SOI film stack. Both spectrometer and BPR were combined to characterize the plate and storage polysilicons. A new global optimization method was developed to find the best solution in parameter spaces with up to …
- 238000005259 measurement 0 title abstract description 28
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical means
- G01B11/02—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colour
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colour
- G01J3/28—Investigating the spectrum
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11119050B2 (en) | Methods and systems for measurement of thick films and high aspect ratio structures | |
| US7573582B2 (en) | Method for monitoring film thickness, a system for monitoring film thickness, a method for manufacturing a semiconductor device, and a program product for controlling film thickness monitoring system | |
| CN100353140C (en) | Method for in-situ monitoring of patterned substrate processing using reflectometry | |
| JP4958546B2 (en) | System and method for IN-SITU measurement and control of film thickness and groove depth | |
| US6940592B2 (en) | Calibration as well as measurement on the same workpiece during fabrication | |
| US8564793B2 (en) | Thin films measurement method and system | |
| Leng et al. | Simultaneous measurement of six layers in a silicon on insulator film stack using spectrophotometry and beam profile reflectometry | |
| JP2004502952A (en) | High-speed thickness mapping apparatus and method for patterned thin film | |
| US6867862B2 (en) | System and method for characterizing three-dimensional structures | |
| Leng et al. | Spectrophotometry and beam profile reflectometry measurement of six layers in an SOI film stack | |
| US20250076185A1 (en) | Angle Of Incidence And Azimuth Angle Resolved Spectroscopic Ellipsometry For Semiconductor Metrology | |
| JP7463551B2 (en) | Trench optical measurement target | |
| McGahan et al. | Combined spectroscopic ellipsometry and reflectometry for advanced semiconductor fabrication metrology | |
| Diebold | In-line metrology | |
| US20250110042A1 (en) | Spectroscopic Ellipsometry With Detector Resolved Numerical Aperture For Deep Structure Metrology | |
| Leng et al. | Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry | |
| McGahan et al. | Optical characterization of polycrystalline silicon thin films | |
| McGahan et al. | Optical characterization of TiN thin films | |
| Bourzgui et al. | Embedded Spectroscopic Reflectometry Metrology on FEOL Silicon Dioxide Trench Polishing Equipment |