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Hou et al., 2021 - Google Patents

High band-to-band tunneling current in InAs/GaSb heterojunction esaki diodes by the enhancement of electric fields close to the Mesa sidewalls

Hou et al., 2021

Document ID
115433431845081872
Author
Hou W
Shih P
Lin H
Wu B
Li J
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

InAs/GaSb heterojunction Esaki diodes with a high peak current density of 9 MA/cm 2 are demonstrated. Negative differential resistance (NDR) is achieved from 300 to 4 K, showing that band-to-band tunneling (BTBT) is the dominant transport mechanism. By increasing the …
Continue reading at ieeexplore.ieee.org (other versions)

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