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Fang et al., 2022 - Google Patents

Low temperature fine-pitch Cu-Cu bonding using Au nanoparticles as intermediate

Fang et al., 2022

Document ID
11156444977999203050
Author
Fang J
Cai J
Wang Q
Shi X
Zheng K
Zhou Y
Publication year
Publication venue
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)

External Links

Snippet

In this paper, we propose a Cu-Cu bonding approach utilizing Au nanoparticles (NPs) fabricated by Physical Vapor Deposition (PVD) method as intermediate to realize time- saving, low-temperature and fine-pitch bonding. Confocal microscope was used to observe …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
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    • H01L2224/13001Core members of the bump connector
    • H01L2224/13005Structure
    • H01L2224/13009Bump connector integrally formed with a via connection of the semiconductor or solid-state body
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
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    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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