Celii et al., 1996 - Google Patents
In situ composition monitoring of InGaAs/InP using quadrupole mass spectrometryCelii et al., 1996
View PDF- Document ID
- 10805037916533148260
- Author
- Celii F
- Kao Y
- Liu H
- Publication year
- Publication venue
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
External Links
Snippet
The use of in situ quadrupole mass spectrometry (QMS) provides the precision necessary for many molecular beam epitaxy (MBE) applications in which the composition of ternary or quaternary epitaxial layers must be controlled. Here we show that the composition of In x …
- 239000000203 mixture 0 title abstract description 41
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yao et al. | Temperature dependence of optical properties of GaAs | |
| Aspnes | Real-time optical diagnostics for epitaxial growth | |
| Zettler et al. | Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques | |
| Okamoto et al. | Structural and energy-gap characterization of metalorganic-vapor-phase-epitaxy-grown InAsBi | |
| Maracas et al. | In situ spectroscopic ellipsometry in molecular beam epitaxy | |
| Haberland et al. | Spectroscopic process sensors in MOVPE device production | |
| Kim et al. | X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si 1− x Ge x, Si 1− y C y, and Si 1− x− y Ge x C y on Si (001) | |
| Sobiesierski et al. | As/P exchange on InP (001) studied by reflectance anisotropy spectroscopy | |
| Celii et al. | In situ composition monitoring of InGaAs/InP using quadrupole mass spectrometry | |
| Xie et al. | Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2 | |
| Bassignana et al. | Setting limits on the accuracy of X-ray determination of Al concentration in AlGaAsGaAs epitaxial layers | |
| Engel et al. | Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE | |
| Rossow et al. | Thin epitaxial films of wide gap II–VI compounds studied by spectroscopic ellipsometry | |
| Kuo et al. | Measurement of Al x Ga1− x As temperature dependent optical constants by spectroscopic ellipsometry | |
| Behr et al. | Growth model for the molecular beam epitaxial growth of CdTe using reflection high energy electron diffraction oscillation measurements | |
| Beresford et al. | Metastability of InGaAs/GaAs probed by in situ optical stress sensor | |
| Bell et al. | Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition | |
| Aspnes | Real-Time Surface and Near-Surface Optical Diagnostics for Epitaxial Growth | |
| Jackson et al. | Monitoring Ga and In desorption and In surface segregation during MBE using atomic absorption | |
| Sandroff et al. | Substrate temperature measurement in a molecular beam epitaxy chamber using in situ GaAs photoluminescence monitoring | |
| Kuo et al. | Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer | |
| Celii et al. | Closed-loop thickness control of resonant-tunneling diode MBE growth using spectroscopic ellipsometry | |
| Celii et al. | Optical diagnostic monitoring of resonant-tunneling diode growth | |
| Alt et al. | Quantitative spectroscopy of substitutional nitrogen in GaAs1− x N x epitaxial layers by local vibrational mode absorption | |
| Bell et al. | Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor |