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Cao et al., 2013 - Google Patents

Atomic diffusion and interface reaction of Cu/Si (111) films prepared by ionized cluster beam deposition

Cao et al., 2013

Document ID
10750655071825286195
Author
Cao B
Yang T
Li G
Cho S
Kim H
Publication year
Publication venue
Vacuum

External Links

Snippet

Cu thin films were deposited on P type Si (111) substrates by ionized cluster beams at different acceleration voltage. The interface reaction and atomic diffusion of Cu/Si (111) system were studied at different annealing temperatures by X-ray diffraction (XRD) and …
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