[go: up one dir, main page]

Johar et al., 2020 - Google Patents

Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template

Johar et al., 2020

View HTML
Document ID
10731689388103844242
Author
Johar M
Kim T
Song H
Waseem A
Kang J
Hassan M
Bagal I
Cho Y
Ryu S
Publication year
Publication venue
Nanoscale Advances

External Links

Snippet

We have demonstrated for the first time the hybrid development of next-generation 3-D hierarchical GaN/InGaN multiple-quantum-well nanowires on a patterned Si nanowire- template. The patterned Si nanowire-template is fabricated using metal-assisted chemical …
Continue reading at pubs.rsc.org (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nano-rods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y20/00—Nano-optics, e.g. quantum optics or photonic crystals

Similar Documents

Publication Publication Date Title
Barrigón et al. Synthesis and applications of III–V nanowires
Zhang et al. III–V nanowires and nanowire optoelectronic devices
Ra et al. Coaxial In x Ga1–x N/GaN multiple quantum well nanowire arrays on Si (111) substrate for high-performance light-emitting diodes
Li et al. Synthesis of uniform disk-shaped copper telluride nanocrystals and cation exchange to cadmium telluride quantum disks with stable red emission
Khon et al. Improving the catalytic activity of semiconductor nanocrystals through selective domain etching
Morral et al. Prismatic quantum heterostructures synthesized on molecular‐beam epitaxy GaAs nanowires
Yeh et al. InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays
Gu et al. Aligned ZnO nanorod arrays grown directly on zinc foils and zinc spheres by a low-temperature oxidization method
Li et al. Band-gap tunable 2D hexagonal (GaN) 1–x (ZnO) x solid-solution nanosheets for photocatalytic water splitting
Johar et al. Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template
Johar et al. Ultrafast carrier dynamics of conformally grown semi-polar (112 [combining macron] 2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires
Boras et al. Self-catalyzed AlGaAs nanowires and AlGaAs/GaAs nanowire-quantum dots on Si substrates
Lu et al. Correlation between optical and structural characteristics in coaxial GaInN/GaN multiple quantum shell nanowires with AlGaN spacers
Patsha et al. Optoelectronic properties of single and array of 1-D III-nitride nanostructures: An approach to light-driven device and energy resourcing
Sankaranarayanan et al. Catalytic growth of gallium nitride nanowires on wet chemically etched substrates by chemical vapor deposition
Kimura et al. Self-assembled single-crystalline GaN having a bimodal meso/macropore structure to enhance photoabsorption and photocatalytic reactions
Hwang et al. Strong Enhancement of Light Emission in Core–Shell InGaN/GaN Multi-Quantum-Well Nanowire Light-Emitting Diodes by Incorporating Graphene Quantum Dots
Xi et al. The fabrication of GaN/InGaN nano-pyramids photoanode and its enhanced water splitting performance
Hiruma et al. Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective‐Area Metal‐Organic Vapor‐Phase Epitaxy
da Silva et al. Exploring Au Droplet Motion in Nanowire Growth: A Simple Route toward Asymmetric GaP Morphologies
Nikoobakht et al. Long range and collective impact of Au surface adatoms on nanofin growth
Yan et al. Solution-processed, barrier-confined, and 1D nanostructure supported quasi-quantum well with large photoluminescence enhancement
Johar et al. Epitaxial growth of GaN core and InGaN/GaN multiple quantum well core/shell nanowires on a thermally conductive beryllium oxide substrate
KR101695922B1 (en) Photoconductive device based on a nanowire grown using graphene and Method for manufacturing the same
Yan et al. Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion