Park et al., 2000 - Google Patents
Chemical etching of InGaAsP/InP using HBr-H/sub 3/PO/sub 4/-K/sub 2/Cr/sub 2/O/sub 7/and its application to microlens arrayPark et al., 2000
- Document ID
- 10676409060220899302
- Author
- Park E
- Kwon Y
- Publication year
- Publication venue
- Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No. 00CH37107)
External Links
Snippet
InP/InGaAsP etching properties of HBr-H/sub 3/PO/sub 4/-(0.5 M) K/sub 2/Cr/sub 2/O/sub 7/etchant such as masking material, etching rate, etching profile, etched side wall shape and etc are studied. Using these characteristics, we made InP microlens array. SEM pictures and …
- 238000003486 chemical etching 0 title description 4
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/10—Light guides of the optical waveguide type
- G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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