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Lin et al., 1995 - Google Patents

Deposition and properties of Mo–N films

Lin et al., 1995

Document ID
10609447015178999722
Author
Lin K
Ho Y
Publication year
Publication venue
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

External Links

Snippet

Mo–N films were deposited on glass or silicon wafers by reactive sputtering. The growth rate, composition, microstructure, and sheet resistance of the films were analyzed and determined to be controlled by deposition power as well as by N2 partial pressure. Grain …
Continue reading at pubs.aip.org (other versions)

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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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