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Sallagoity et al., 2002 - Google Patents

Analysis of width edge effects in advanced isolation schemes for deep submicron CMOS technologies

Sallagoity et al., 2002

Document ID
10557927973929794261
Author
Sallagoity P
Ada-Hanifi M
Paoli M
Haond M
Publication year
Publication venue
IEEE transactions on electron devices

External Links

Snippet

The evolution of the active area/isolation transition has resulted in modification of the isolation induced parasitic effects on the device. Based on experimental and simulation results, this paper presents an analysis of the corner parasitic effects induced by an abrupt …
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    • H01L21/8232—Field-effect technology
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