Ou et al., 2017 - Google Patents
A 2.4-GHz dual-mode resizing power amplifier with a constant conductance output matchingOu et al., 2017
- Document ID
- 1039505678782644540
- Author
- Ou W
- Tsai Y
- Tseng P
- Lu L
- Publication year
- Publication venue
- 2017 30th IEEE International System-on-Chip Conference (SOCC)
External Links
Snippet
A 2.4-GHz dual-mode power amplifier with transistor resizing is proposed. The proposed technique keeps the conductance for optimum power-matching constant in both modes. By introducing transformers and capacitors, the 50-ohm load is matched to near-optimal …
- 238000000034 method 0 abstract description 15
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0294—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
- H03F3/604—Combinations of several amplifiers using FET's
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI462469B (en) | Doherty power amplifier | |
KR101089891B1 (en) | Integrated Power Amplifier System for Wireless Communication Devices | |
US7242245B2 (en) | Method and apparatus for an improved power amplifier | |
Kaymaksut et al. | Dual-mode CMOS Doherty LTE power amplifier with symmetric hybrid transformer | |
US9806673B2 (en) | Class-E outphasing power amplifier with efficiency and output power enhancement circuits and method | |
An et al. | A 2.4 GHz fully integrated linear CMOS power amplifier with discrete power control | |
Yin et al. | A compact dual-band digital Doherty power amplifier using parallel-combining transformer for cellular NB-IoT applications | |
Yeh et al. | A 60-GHz power amplifier design using dual-radial symmetric architecture in 90-nm low-power CMOS | |
Kaymaksut et al. | 3.4 A dual-mode transformer-based doherty LTE power amplifier in 40nm CMOS | |
Lee et al. | A dual-power-mode output matching network for digitally modulated CMOS power amplifier | |
Jang et al. | A CMOS RF power amplifier using an off-chip transmision line transformer with 62% PAE | |
Ou et al. | A 2.4-GHz dual-mode resizing power amplifier with a constant conductance output matching | |
Ho et al. | CMOS power amplifier with novel transformer power combiner | |
Singh et al. | A digitally-tuned triple-band transformer power combiner for CMOS power amplifiers | |
Wu et al. | Fully-integrated linear CMOS power amplifier with proportional series combining transformer for S-Band applications | |
Lee et al. | A 1.8-GHz 2-watt fully integrated CMOS push-pull parallel-combined power amplifier design | |
Cho et al. | Transformer based dual-power-mode CMOS power amplifier for handset applications | |
Luong et al. | A 2.5-ghz multimode broadband bias-segmented power amplifier with linearity-efficiency tradeoff | |
Park et al. | A 1.9-GHz triple-mode class-E power amplifier for a polar transmitter | |
Koca et al. | A wideband high-efficiency doherty power amplifier for lte | |
Kaymaksüt et al. | A 2.4 GHz fully integrated Doherty power amplifier using series combining transformer | |
Chen et al. | A 5.5-GHz multi-mode power amplifier with reconfigurable output matching network | |
Li et al. | A highly-efficient BiCMOS cascode Class-E power amplifier using both envelope-tracking and transistor resizing for LTE-like applications | |
Son et al. | A fully integrated CMOS class-E power amplifier for reconfigurable transmitters with WCDMA/WiMAX applications | |
Ren et al. | A novel stacked class-E-like power amplifier with dual drain output power technique in 0.18 um RFSOI CMOS technology |